1 edition 1.1 august 2004 description the FLM3439-4F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 36.5dbm (typ.) ?high gain: g 1db = 12.0db (typ.) ?high pae: add = 38% (typ.) ?low im 3 = -46dbc@po = 25.5dbm ?broad band: 3.4 ~ 3.9ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed package FLM3439-4F c-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 25 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 16.0 and -2.2 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 1950 2900 - 1000 - -1.0 -2.0 -3.5 -5.0 - - 11.0 12.0 - -38- 35.5 36.5 - v ds = 5v, i ds = 90ma v ds = 5v, i ds = 1100ma v ds = 5v, v gs = 0v i gs = -90 a v ds =10v, i ds = 0.55 i dss (typ.), f = 3.4 ~ 3.9 ghz, z s =z l = 50 ohm f = 3.9 ghz, ? f = 10 mhz 2-tone test p out = 25.5dbm s.c.l. ma ms v db % -44 -46 - dbc dbm v g m v p v gso p 1db g 1db drain current - 1100 1300 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 5.0 6.0 c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ib 10v x i dsr x r th channel temperature rise -- 80 c ? t ch
2 FLM3439-4F c-band internally matched fet output power & im 3 vs. input power v ds =10v f 1 = 3.9 ghz f 2 = 3.91 ghz 2-tone test 12 14 16 18 20 input power (s.c.l.) (dbm) s.c.l.: single carrier level 29 31 33 27 25 23 -50 -40 -30 -20 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) power derating curve 12 6 24 30 18 0 50 100 150 200 case temperature ( c) total power dissipation (w) output power vs. frequency 3.4 3.65 3.9 frequency (ghz) 36 38 37 35 33 34 32 output power (dbm) v ds =10v p 1db output power vs. input power v ds = 10v f = 3.65 ghz 14 16 18 20 22 24 26 input power (dbm) 36 38 34 32 30 28 30 45 15 output power (dbm) add p out add (%) pin=25dbm 23dbm 21dbm 19dbm
3 FLM3439-4F c-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 25 10 250 0.2 0.1 8 50 ? 2 scale for |s 12 | 6 4 3.8 3.8 3.8 3.8 3.7 3.7 3.7 3.7 3.6 3.6 3.6 3.6 3.5 3.5 3.5 3.5 3.4 3.4 3.4 3.4 3.3 3.3 3.3 3.3 3.2ghz 3.2ghz 3.2ghz 3.2ghz 3.9 3.9 3.9 3.9 4.0 4.0 4.0 4.0 4.1 4.1 4.1 4.1 scale for |s 21 | s-parameters v ds = 10v, i ds = 1100ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 3200 .435 -4.0 5.047 37.6 .077 -28.0 .521 45.7 3300 .577 -32.3 4.886 14.4 .080 -52.6 .391 35.4 3400 .669 -58.2 4.706 -8.0 .079 -75.0 .277 25.3 3500 .711 -82.6 4.588 -29.7 .082 -97.5 .187 11.3 3600 .709 -108.4 4.545 -51.4 .083 -118.1 .118 -19.0 3700 .670 -137.6 4.571 -74.4 .088 -141.4 .119 -76.0 3800 .589 -174.2 4.609 -99.3 .092 -164.8 .205 -115.9 3900 .493 135.0 4.516 -127.8 .094 166.6 .334 -141.3 4000 .478 71.5 4.128 -158.5 .089 137.3 .454 -162.5 4100 .573 14.1 3.414 171.8 .077 109.8 .532 178.2 4200 .685 -26.3 2.664 146.0 .062 85.7 .557 162.7
4 FLM3439-4F c-band internally matched fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
|
